I studied subjects ranging from interface reliability to self-assembled novel structures. A broad range of materials characterization techniques has been learned and successfully applied, including the most sophisticated and state-of-the-art Transmission Electron Microscopy (TEM).
Specifically, my time has been devoted to
The presence of weak Cu-oxide has detrimental implications for the adhesion, moisture sensitivity, stress- and electro-migration of Cu bondlines in advanced packaging, often leading to premature device failure. We developed a novel, low-cost, single-step sol-gel synthetic route capable of reducing the weak Cu-oxide while simultaneously depositing a high-performance hybrid layer (HL). The HL acts both as an adhesion layer at the Cu/epoxy interface, as well as a barrier film that prevents moisture degradation and Cu stress- and electro-migration.
My work showing the grain structure of the Cu film supported on the Si substrate. Image was taken using the sperical-aberration corrected (environmental) Transmission Electron Microscope (TEM) at 300 kV at the Stanford Nano Shared Facility (SNSF).
The strength of bonding at epoxy/SiO2 interface and its susceptibility to environmental degradation have a profound impact on the lifetime and reliability of microelectronic devices. We examined the interface’s adhesion improvement as a result of hybrid-layer incorporation and the kinetics of hydrolysis and polycondensation of the molecular precursors.